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| 2SK2753-01 FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 120V 32m 50A 150W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Drain-gate-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 120 120 50 200 30 150 150 -55 ~ +150 Unit V A A V W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance Symbol BV DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=120V Tch=25C VGS=0V Tch=125C VGS=30V VDS=0V ID25A VGS=10V ID=25A VDS=25V VDS=25V VGS=0V f=1MHz VCC=50V ID=50A VGS=10V RGS=10 Tch=25C L = 100H IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C Min. 120 2,5 Typ. 3,0 10 0,2 10 24 50 4250 820 250 30 160 150 140 1,3 150 1,1 Max. 3,5 500 1,0 100 32 6400 1200 370 45 240 230 210 2,0 25 50 Unit V V A mA nA m S pF pF pF ns ns ns ns A V ns C Symbol R th(ch-c) R th(ch-a) Test conditions channel to case channel to air Min. Typ. Max. 0,833 35 Unit C/W C/W N-channel MOS-FET 120V 2SK2753-01 FAP-IIS Series Drain-Source-On-State Resistance vs. Tch RDS(on) = f(Tch): ID=25A; VGS=10V 32m 50A 150W Typical Output Characteristics ID=f(VDS); 80s pulse test; TC=25C > Characteristics Typical Transfer Characteristics ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C ID [A] 1 RDS(ON) [] 2 ID [A] 3 VDS [V] Tch [C] VGS [V] Typical Drain-Source-On-State-Resistance vs. ID RDS(on)=f(ID); 80s pulse test;TC=25C Typical Forward Transconductance vs. ID gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C Gate Threshold Voltage vs. Tch VGS(th)=f(Tch); ID=10mA; VDS=VGS RDS(ON) [] gfs [S] 5 VGS(th) [V] 4 6 ID [A] ID [A] Tch [C] Typical Capacitances vs. VDS C=f(VDS); VGS=0V; f=1MHz Typical Gate Charge Characteristic VGS=f(Qg): ID=50A; Tc=25C Forward Characteristics of Reverse Diode IF=f(VSD); 80s pulse test; VGS=0V C [F] VDS [V] VGS [V] IF [A] 7 8 9 VDS [V] Qg [nC] VSD [V] Power dissipation PD=f(Tc) Safe operation area ID=f(VDS): D=0,01, Tc=25C Zth(ch-c) [K/W] Transient Thermal impedance Zthch=f(t) parameter:D=t/T PD(W) 10 ID [A] 12 TC(oC) VDS [V] t [s] This specification is subject to change without notice! |
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